US 12,129,541 B2
Deposition method for tuning magnetic field distribution of deposition equipment
Jing-Cheng Lin, Hsinchu County (TW)
Assigned to SKY TECH INC., Hsinchu County (TW)
Filed by SKY TECH INC., Hsinchu County (TW)
Filed on Nov. 30, 2022, as Appl. No. 18/072,483.
Application 18/072,483 is a division of application No. 17/488,126, filed on Sep. 28, 2021, abandoned.
Claims priority of application No. 110119555 (TW), filed on May 28, 2021.
Prior Publication US 2023/0091273 A1, Mar. 23, 2023
Int. Cl. C23C 14/54 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/545 (2013.01) [C23C 14/3492 (2013.01); C23C 14/35 (2013.01); C23C 14/542 (2013.01); H01J 37/3435 (2013.01); H01J 37/345 (2013.01); H01J 37/3461 (2013.01); H01J 37/347 (2013.01); H01J 37/3476 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A deposition method for tuning magnetic field distribution of a deposition equipment, wherein the deposition equipment comprises a carrier, a target material, a magnetic device and a plurality of shield units, and the target material faces the carrier and is located between the carrier and the magnetic device, comprising:
placing a first substrate on the carrier;
performing a deposition process to the first substrate for forming a thin film on a surface of the first substrate;
measuring thicknesses of the thin film on a plurality of areas of the first substrate;
partitioning the target material into a plurality of areas according to the plurality of areas of the first substrate;
arranging the plurality of shield units on part of areas of the target material according to the thicknesses of thin film on the areas of the first substrate, to partially blocking a magnetic field of the magnetic device by the plurality of shield units, wherein each of the shield units is made of an electrical conductor;
inserting a plurality of shield pins of the plurality of shield units into a plurality of pin holes of the target material, wherein the plurality of shield pins are located on the plurality of shield units and the plurality of pin holes are located on the target material;
partitioning the plurality of areas of the first substrate into a first-thickness area and a second-thickness area in accordance with the thicknesses of the thin film on the first substrate, wherein thicknesses of the thin film on the first-thickness area are thicker than that on the second-thickness area;
partitioning the plurality of shield units as a first-shield unit and a second-shield unit, wherein both the first-shield unit and the second-shield unit comprise a plurality of shield holes, and total area or arrangement density of the shield holes of the first-shield unit is smaller than that of the second-shield unit;
disposing the first-shield unit between the magnetic device and the target material in accordance with the first-thickness area, and disposing the second-shield unit between the magnetic device and the target material in accordance with the second-thickness area; and
placing a second substrate on the carrier and performing the deposition process to the second substrate.