US 12,128,482 B2
Diamond joined body and method for manufacturing diamond joined body
Hirotsugu Iwasaki, Hyogo (JP); Jinning Li, Hyogo (JP); Tadashi Yamaguchi, Hyogo (JP); and Shinichiro Yurugi, Hyogo (JP)
Assigned to SUMITOMO ELECTRIC HARDMETAL CORP., Hyogo (JP)
Appl. No. 16/972,162
Filed by SUMITOMO ELECTRIC HARDMETAL CORP., Hyogo (JP)
PCT Filed Mar. 27, 2019, PCT No. PCT/JP2019/013210
§ 371(c)(1), (2) Date Dec. 4, 2020,
PCT Pub. No. WO2019/244429, PCT Pub. Date Dec. 26, 2019.
Claims priority of application No. 2018-116201 (JP), filed on Jun. 19, 2018.
Prior Publication US 2021/0237164 A1, Aug. 5, 2021
Int. Cl. B23B 27/14 (2006.01); B22F 3/12 (2006.01); B22F 7/00 (2006.01); B22F 7/06 (2006.01); B22F 5/00 (2006.01)
CPC B23B 27/14 (2013.01) [B22F 3/12 (2013.01); B22F 7/008 (2013.01); B22F 7/06 (2013.01); B22F 2005/001 (2013.01); B22F 2302/406 (2013.01); B23B 2226/315 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A diamond joined body comprising a hard substrate and a polycrystalline diamond layer arranged on the hard substrate, wherein
an area ratio of carbon grains in a region of the hard substrate is greater than 0% and less than 0.03%, the region being a region enclosed by an interface between the hard substrate and the polycrystalline diamond layer and an imaginary line x in a cross section parallel to a normal direction of the interface, the imaginary line x being parallel to the interface on the hard substrate side and having a distance of 500 μm from the interface,
wherein the hard substrate does not include rhenium, and
wherein the hard substrate includes tungsten carbide grains having a volume average grain size of not less than 0.1 μm and not more than 3 μm.