US 12,457,910 B2
Magnetoelectric spin-orbit device with in-plane and perpendicular magnetic layers and method of manufacturing same
Punyashloka Debashis, Hillsboro, OR (US); Chia-Ching Lin, Portland, OR (US); Hai Li, Portland, OR (US); Dmitri Evgenievich Nikonov, Beaverton, OR (US); and Ian Alexander Young, Olympia, WA (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Mar. 2, 2022, as Appl. No. 17/685,053.
Prior Publication US 2023/0284538 A1, Sep. 7, 2023
Int. Cl. H10N 52/00 (2023.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01); H03K 19/18 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/00 (2023.02) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H01F 10/3268 (2013.01); H01F 10/3286 (2013.01); H03K 19/18 (2013.01); H10B 61/22 (2023.02); H10N 52/01 (2023.02); H01F 10/329 (2013.01); H10N 50/85 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A logic device including:
a first electrically conductive layer;
a layer including a magnetoelectric material (ME layer) on the first electrically conductive layer;
a layer including a ferromagnetic material with in-plane magnetic anisotropy (FM layer) on the ME layer;
a middle layer on the FM layer, the middle layer including one of a second electrically conductive layer or an in-plane ferromagnetic layer;
a layer including a dielectric material on the middle layer (coupling layer);
a layer including a spin orbit coupling material (SOC layer) on the coupling layer; and
a layer including a ferromagnetic material with perpendicular magnetic anisotropy (PMA layer) on the SOC layer.