US 12,457,908 B2
Magnetic memory devices
Stuart Papworth Parkin, Halle (DE); See-Hun Yang, Halle (DE); Jiho Yoon, Halle (DE); and Ung Hwan Pi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR); and Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., Munich (DE)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 9, 2022, as Appl. No. 17/983,554.
Claims priority of application No. 10-2021-0164209 (KR), filed on Nov. 25, 2021.
Prior Publication US 2023/0165161 A1, May 25, 2023
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02)] 20 Claims
OG exemplary drawing
 
20. A magnetic memory device comprising:
a conductive line that extends in a first direction; and
a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked on the conductive line in a second direction perpendicular to the first direction, the lower magnetic layer and the upper magnetic layer antiferromagnetically coupled to each other by the spacer layer; and
a non-magnetic pattern that is within the upper magnetic layer and on the spacer layer, the non-magnetic pattern comprising a first junction surface that is in contact with a first portion of the upper magnetic layer; and a second junction surface that is in contact with a second portion of the upper magnetic layer,
wherein the non-magnetic pattern vertically overlaps with a lower magnetic domain wall in the lower magnetic layer.