US 12,457,907 B2
Magnetoresistive random-access memory with top and bottom electrodes deposited in unison
Oscar van der Straten, Guilderland Center, NY (US); Koichi Motoyama, Clifton Park, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 13, 2022, as Appl. No. 17/931,689.
Prior Publication US 2024/0090337 A1, Mar. 14, 2024
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A semiconductor structure for a magnetoresistive random-access memory (MRAM) device, the semiconductor structure comprising:
a bottom electrode under a magnetic tunnel junction (MTJ) pillar, wherein an electrode material of the bottom electrode extends vertically towards an interlayer dielectric layer and the electrode material surrounds a spacer, wherein the spacer encapsulates the MTJ pillar and wherein the bottom electrode have one of a round shape or an oval shape;
a top electrode on the MTJ pillar, wherein the top electrode is thinner than the bottom electrode and wherein the top electrode have one of a round shape or an oval shape; and
a metal contact with a liner is disposed over the top electrode on the MTJ pillar.