US 12,457,906 B2
Spin-orbit torque magnetic random-access memory (SOT-MRAM) device
Dmytro Apalkov, San Jose, CA (US); Jaewoo Jeong, San Jose, CA (US); and Ikhtiar, San Jose, CA (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 12, 2022, as Appl. No. 17/887,042.
Claims priority of provisional application 63/388,846, filed on Jul. 13, 2022.
Prior Publication US 2024/0023458 A1, Jan. 18, 2024
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A spin-orbit torque magnetic random-access memory (SOT-MRAM) device comprising:
a substrate;
a spin orbit torque line above the substrate;
a composite metal-oxide seed layer above the spin orbit torque line; and
a magnetic tunnel junction above the composite metal-oxide seed layer, the magnetic tunnel junction comprising:
a free layer above the composite metal-oxide seed layer;
a main tunneling barrier layer above the free layer; and
a pinned layer above the main tunneling barrier layer,
wherein the composite metal-oxide seed layer comprises a first metal oxide layer and a second metal oxide layer, and
wherein at least one of the first metal oxide layer or the second metal oxide layer comprises a number of metal oxidation layers.