US 12,457,904 B2
Methods of manufacturing magnetoresistive random access memory device
Minkwan Kim, Seoul (KR); Daeeun Jeong, Yongin-si (KR); and Kyungtae Nam, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 17, 2022, as Appl. No. 17/696,968.
Claims priority of application No. 10-2021-0094661 (KR), filed on Jul. 20, 2021.
Prior Publication US 2023/0023774 A1, Jan. 26, 2023
Int. Cl. H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a magnetoresistive random-access memory (MRAM) device, the method comprising:
forming an insulating interlayer on a substrate;
forming a contact plug using a gas including a halogen element, the contact plug extending through the insulating interlayer;
performing a degassing process to remove a portion of the gas with the halogen element from the contact plug;
after performing the degassing process, forming a first blocking layer that blocks diffusion of the halogen element from the contact plug, the first blocking layer covering an upper surface of the contact plug and an upper surface of the insulating interlayer, and the first blocking layer including an amorphous material;
forming a lower electrode layer on the first blocking layer; and
forming a magnetic tunnel junction structure layer on the lower electrode layer.