US 12,457,840 B1
2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method
Jung Yup Yang, Gunsan-si (KR); and Hyojung Kim, Incheon (KR)
Assigned to Industry-Academic Cooperation Foundation, Kunsan National University, Gunsan-si (KR)
Filed by Industry-Academic Cooperation Foundation, Kunsan National University, Gunsan-si (KR)
Filed on Jul. 3, 2025, as Appl. No. 19/260,203.
Claims priority of application No. 10-2025-0034439 (KR), filed on Mar. 18, 2025.
Int. Cl. H10K 10/88 (2023.01); H10K 10/46 (2023.01)
CPC H10K 10/88 (2023.02) [H10K 10/466 (2023.02); H10K 10/488 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a halide perovskite layer formed on an upper surface side of the substrate;
a two-dimensional material layer formed on the halide perovskite layer;
an electrode unit disposed on the halide perovskite layer and including a drain electrode and a source electrode; and
a polymer layer formed on the two-dimensional material layer and the electrode unit, and
wherein the two-dimensional material layer is manufactured by being stacked on the halide perovskite layer by a dry transfer method,
wherein a gap between the two-dimensional material layer and any one electrode of the drain electrode and the source electrode is adjusted based on a predetermined length, thereby controlling electrical characteristics of the semiconductor device.