US 12,457,830 B2
Display device with improved emission efficiency and method for manufacturing same
Young Rag Do, Seoul (KR); Yun Jae Eo, Seoul (KR); and Hoo Keun Park, Cheongju-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Appl. No. 17/423,463
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
PCT Filed Nov. 25, 2019, PCT No. PCT/KR2019/016251
§ 371(c)(1), (2) Date Jul. 15, 2021,
PCT Pub. No. WO2020/149516, PCT Pub. Date Jul. 23, 2020.
Claims priority of application No. 10-2019-0005430 (KR), filed on Jan. 15, 2019.
Prior Publication US 2022/0069178 A1, Mar. 3, 2022
Int. Cl. H10H 20/853 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01)
CPC H10H 20/853 (2025.01) [H01L 25/0753 (2013.01); H10H 20/0362 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A display device comprising:
a base layer;
a first electrode and a second electrode which are disposed on a surface of the base layer;
at least one light emitting element disposed between the first electrode and the second electrode and configured to emit light;
a protective layer disposed on the base layer to cover at least the first electrode, the second electrode, and the at least one light emitting element; and
an insulating layer disposed between the protective layer and the at least one light emitting element in a first direction perpendicular to the surface of the base layer,
wherein the protective layer includes a base material layer and a light emission pattern in which at least a partial region of a surface of the base material layer protrudes, the base material layer comprising at least one bead protruding from a top surface of the base material layer to form the light emission pattern,
wherein the at least one light emitting element comprises:
a first conductivity type semiconductor,
a second conductivity type semiconductor, and
an active layer disposed between the first conductivity type semiconductor and the second conductivity type semiconductor along a second direction different from the first direction,
wherein the insulating layer directly contacts the at least one light emitting element,
wherein the insulating layer does not overlap the active layer of the at least one light emitting element along the first direction, and
wherein the insulating layer overlaps the first conductivity type semiconductor of the at least one light emitting element along the first direction.