US 12,457,825 B2
Semiconductor light-emitting element
Keimei Masamoto, Niigata (JP); Mitsuaki Oya, Tokyo (JP); Shigeo Hayashi, Kyoto (JP); Masanori Hiroki, Shiga (JP); Masahiro Kume, Toyama (JP); and Gaku Nishikawa, Toyama (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on Nov. 29, 2021, as Appl. No. 17/536,472.
Application 17/536,472 is a continuation of application No. PCT/JP2020/019313, filed on May 14, 2020.
Claims priority of application No. 2019-105735 (JP), filed on Jun. 5, 2019.
Prior Publication US 2022/0085244 A1, Mar. 17, 2022
Int. Cl. H10H 20/831 (2025.01); H10H 20/832 (2025.01)
CPC H10H 20/831 (2025.01) [H10H 20/832 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting element comprising:
a semiconductor layer including a compound semiconductor; and
an electrode disposed on the semiconductor layer, the electrode including a power feeding portion and an extension portion extending from the power feeding portion,
wherein the power feeding portion has a width greater than a width of the extension portion,
the electrode includes an electrode layer disposed on a semiconductor layer side of the electrode, and a wiring layer disposed on the electrode layer,
the electrode layer includes a first metal layer disposed in the power feeding portion, and a second metal layer disposed closer to an extension portion side than the first metal layer is and directly connected to the first metal layer,
the first metal layer and the second metal layer are in ohmic contact with the semiconductor layer,
the first metal layer has an electrical conductivity higher than an electrical conductivity of the second metal layer, and
the wiring layer is continuously disposed on the first metal layer and the second metal layer.