US 12,457,824 B2
Infrared optical device
Daiki Yasuda, Tokyo (JP); and Hiromi Fujita, Tokyo (JP)
Assigned to Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on Mar. 20, 2023, as Appl. No. 18/186,190.
Claims priority of application No. 2022-052084 (JP), filed on Mar. 28, 2022; and application No. 2023-028926 (JP), filed on Feb. 27, 2023.
Prior Publication US 2023/0307570 A1, Sep. 28, 2023
Int. Cl. H10F 77/40 (2025.01); H10F 77/124 (2025.01)
CPC H10F 77/413 (2025.01) [H10F 77/1248 (2025.01)] 15 Claims
OG exemplary drawing
 
1. An infrared optical device that has a light emission/reception characteristic having a peak at a center wavelength λ, the infrared optical device comprising:
a semiconductor substrate; and
a thin film laminate portion including a first reflecting layer, an active layer, a p-type semiconductor layer, and a first electrode layer formed on the semiconductor substrate in stated order, wherein
the first reflecting layer and the p-type semiconductor layer are directly connected to the active layer,
the first reflecting layer is constructed through layering of a low-refractive-index layer that is an n-type semiconductor layer and a high-refractive-index layer having a higher refractive index than the low-refractive-index layer,
the low-refractive-index layer is placed closest to the active layer in the first reflecting layer,
the active layer and the p-type semiconductor layer each have a higher refractive index than the low-refractive-index layer, and
the center wavelength λ is 7 μm or more at room temperature.