US 12,457,823 B2
Photodetector structure with air gap and related methods
Siva P. Adusumilli, South Burlington, VT (US); Ramsey Hazbun, Colchester, VT (US); John J. Ellis-Monaghan, Grand Isle, VT (US); and Rajendran Krishnasamy, Essex Junction, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Aug. 19, 2022, as Appl. No. 17/820,979.
Prior Publication US 2024/0063315 A1, Feb. 22, 2024
Int. Cl. H10F 77/40 (2025.01); H10F 30/223 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01)
CPC H10F 77/413 (2025.01) [H10F 30/223 (2025.01); H10F 71/1212 (2025.01); H10F 77/122 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A photodetector structure, comprising:
a first semiconductor layer over a first portion of a doped well in a substrate;
an air gap within a trench isolation structure and vertically between the first semiconductor layer and the first portion of the doped well; and
an insulative collar laterally surrounding the air gap, the insulative collar on the first portion of the doped well between the air gap and a second portion of the doped well.