US 12,457,819 B2
Image sensor
Miseon Park, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 24, 2022, as Appl. No. 18/048,918.
Claims priority of application No. 10-2022-0033829 (KR), filed on Mar. 18, 2022.
Prior Publication US 2023/0299107 A1, Sep. 21, 2023
Int. Cl. H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/182 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a pixel division structure including a core and a lateral pattern structure on a sidewall of the core, the pixel division structure extending through a substrate in a vertical direction, the vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions, and the unit pixel regions including unit pixels;
a light sensing element in each of the unit pixel regions;
a color filter array layer on the substrate, the color filter array layer including color filters; and
a microlens on the color filter array layer, wherein
the core includes a first filling pattern and a second filling pattern inside the first filling pattern,
each of the first and second filling patterns includes a semiconductor material,
the first filling pattern includes a first material and the second filling pattern includes a second material different from the first material,
the lateral pattern structure includes
a second lateral pattern on the sidewall of the core, and
a first lateral pattern on an outer sidewall of the second lateral pattern,
the first lateral pattern includes silicon oxide, and
the second lateral pattern includes silicon nitride containing carbon.