| CPC H10F 39/807 (2025.01) [H04N 25/79 (2023.01); H10F 39/018 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8057 (2025.01); H10F 39/8063 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01)] | 17 Claims |
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1. An image sensor comprising:
a semiconductor substrate having a first side and a second side opposite to the first side;
a plurality of photoelectric regions arranged in the semiconductor substrate in a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other; and
a separation structure disposed in the semiconductor substrate to separate the plurality of photoelectric regions; and
an isolation layer disposed into the semiconductor substrate and below the separation structure;
wherein the separation structure comprises:
a lower separation structure disposed at the first side of the semiconductor substrate; and
an upper separation structure disposed at the second side of the semiconductor substrate,
wherein in at least a portion of the separation structure, a first vertical central axis between both lateral surfaces of the lower separation structure is not vertically aligned with a second vertical central axis between both lateral surfaces of the upper separation structure,
wherein the separation structure further comprises a linear portion located between the plurality of photoelectric regions and extending in the first direction,
wherein, in a cross-sectional structure of the linear portion of the separation structure in the first direction, the upper separation structure has a first lateral surface and a second lateral surface, wherein the first and the second lateral surfaces are opposite to each other, and
wherein the second lateral surface of the upper separation structure comprises a first portion having a positive angle of inclination, a second portion having a negative angle of inclination, and a bent portion disposed between the first portion and the second portion.
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