| CPC H10F 39/80373 (2025.01) [H10F 39/18 (2025.01); H10F 39/198 (2025.01); H10F 39/8033 (2025.01)] | 14 Claims |
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1. A detection device comprising:
a substrate;
a plurality of transistors provided on the substrate;
a plurality of scan lines that extend in a first direction;
a plurality of signal lines that extend in a second direction intersecting the first direction;
a plurality of photodiodes that are provided in an area surrounded by the scan lines and the signal lines and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and
a shield wiring line that extends in the first direction and overlaps a corresponding one of the scan lines, wherein
the shield wiring line is electrically coupled to, among the signal lines, a power supply signal line configured to supply a power supply potential to the transistors.
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