US 12,457,814 B2
Image sensing device
Hyung June Yoon, Icheon-si (KR); Ho Young Kwak, Icheon-si (KR); Nam Il Kim, Icheon-si (KR); Dong Jin Lee, Icheon-si (KR); Jae Won Lee, Icheon-si (KR); and Hoon Moo Choi, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 1, 2022, as Appl. No. 17/829,541.
Claims priority of application No. 10-2021-0083365 (KR), filed on Jun. 25, 2021.
Prior Publication US 2022/0415942 A1, Dec. 29, 2022
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/8037 (2025.01) [H10F 39/802 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a substrate having a first surface on which light is incident and a second surface facing the first surface;
a plurality of detection structures, each comprising a control node configured to exhibit a conductivity type and generate a potential gradient in the substrate, and a detection node configured to capture photocharge which is generated in response to incident light and migrates in response to the potential gradient;
a first well area disposed to abut the control nodes of the plurality of detection structures and containing an impurity with a different conductivity type from the conductivity type of the control nodes; and
a second well area spaced apart from the control node by a predetermined distance and overlapping with the control node, the second well area including an impurity with a same conductivity type as the conductivity type of the control nodes,
wherein the first well area comprises a well opening extended toward the first surface between the second well areas adjacent to each other.