| CPC H10F 39/8023 (2025.01) [H10F 39/014 (2025.01); H10F 39/028 (2025.01); H10F 39/8027 (2025.01); H10F 39/8033 (2025.01); H10F 39/807 (2025.01); H10F 39/813 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
a semiconductor substrate having a first side;
a trench isolation extending from the first side of the semiconductor substrate into the semiconductor substrate;
a first pixel disposed in the semiconductor substrate and adjacent to the trench isolation;
a second pixel extending from the first side of the semiconductor substrate into the semiconductor substrate and disposed over the first pixel;
a first gate electrode disposed on the first side of the semiconductor substrate and electrically connected to the first pixel; and
a second gate electrode disposed adjacent to the first gate electrode and electrically connected to the second pixel,
wherein each of the first pixel and the second pixel includes a p-n junction, the first pixel includes a first conductivity type region having an L-shape from a cross-sectional view, and the second pixel overlaps the first pixel from a top view perspective.
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