US 12,457,811 B2
Imaging device and electronic equipment
Yosuke Satake, Tokyo (JP); Tomoyuki Arai, Kanagawa (JP); Naohiro Takahashi, Kanagawa (JP); Koichiro Zaitsu, Kanagawa (JP); Akira Matsumoto, Kanagawa (JP); Keiji Nishida, Kanagawa (JP); and Mizuki Nishida, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 18/692,427
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Mar. 4, 2022, PCT No. PCT/JP2022/009286
§ 371(c)(1), (2) Date Mar. 15, 2024,
PCT Pub. No. WO2023/047632, PCT Pub. Date Mar. 30, 2023.
Claims priority of application No. 2021-155511 (JP), filed on Sep. 24, 2021.
Prior Publication US 2024/0379691 A1, Nov. 14, 2024
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/802 (2025.01) [H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
a semiconductor substrate; and
a plurality of imaging elements that are arrayed in a matrix in a first direction and a second direction on the semiconductor substrate and perform photoelectric conversion on incident light,
wherein each of the plurality of imaging elements includes:
a plurality of pixels provided to be adjacent to one another in a predetermined unit region of the semiconductor substrate and including a photoelectric conversion section containing impurities of a first conductivity type;
a separation section that separates the plurality of pixels;
two first element separation walls provided to pierce through at least a part of the semiconductor substrate along two first side surfaces of the predetermined unit region extending in the second direction;
an on-chip lens provided above a light receiving surface of the semiconductor substrate to be shared by the plurality of pixels;
a first diffusion region provided in the semiconductor substrate around the first element separation wall and the separation section and containing impurities of a second conductivity type having a conductivity type opposite to the first conductivity type,
a second diffusion region provided in the semiconductor substrate around two second side surfaces extending in the first direction of the predetermined unit region and containing the impurities of the second conductivity type,
wherein at least a part of the second diffusion region provided perpendicular to the first diffusion region contains the impurities of the second conductivity type at higher concentration compared with the first diffusion region.