US 12,457,802 B2
Display device and method for manufacturing display device
Joung-Keun Park, Asan-si (KR); Ki Wan Ahn, Seoul (KR); and Joo Sun Yoon, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-Si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jun. 14, 2024, as Appl. No. 18/743,758.
Application 18/743,758 is a continuation of application No. 18/094,861, filed on Jan. 9, 2023, granted, now 12,052,892.
Application 18/094,861 is a continuation of application No. 17/330,469, filed on May 26, 2021, granted, now 11,552,151, issued on Jan. 10, 2023.
Application 17/330,469 is a continuation of application No. 16/566,819, filed on Sep. 10, 2019, granted, now 11,024,690, issued on Jun. 1, 2021.
Application 16/566,819 is a continuation of application No. 15/866,220, filed on Jan. 9, 2018, granted, now 10,418,433, issued on Sep. 17, 2019.
Application 15/866,220 is a continuation of application No. 15/276,468, filed on Sep. 26, 2016, granted, now 9,871,086, issued on Jan. 16, 2018.
Application 15/276,468 is a continuation of application No. 14/723,105, filed on May 27, 2015, granted, now 9,455,308, issued on Sep. 27, 2016.
Application 14/723,105 is a continuation of application No. 14/304,827, filed on Jun. 13, 2014, granted, now 9,059,124, issued on Jun. 16, 2015.
Claims priority of application No. 10-2013-0069111 (KR), filed on Jun. 17, 2013.
Prior Publication US 2024/0341120 A1, Oct. 10, 2024
Int. Cl. H10K 59/121 (2023.01); H10D 86/40 (2025.01); H10K 59/122 (2023.01); H10K 59/131 (2023.01); H10K 59/38 (2023.01); H10K 59/80 (2023.01)
CPC H10D 86/481 (2025.01) [H10K 59/121 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/122 (2023.02); H10K 59/131 (2023.02); H10K 59/38 (2023.02); H10K 59/80515 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate;
a driving voltage line disposed over the substrate and transferring a driving voltage;
a transistor electrically connected to the driving voltage line, the transistor comprising a semiconductor layer, a first electrode overlapping the semiconductor layer, a second electrode electrically connected to the semiconductor layer through a first contact hole, and a third electrode electrically connected to the semiconductor layer through a second contact hole;
a first electrode of a light emitting element electrically connected to the transistor, the first electrode of a light emitting element comprising a first portion and a second portion, which is in a same layer as the first portion and extends from the first portion;
an emission layer of the light emitting element overlapping the first electrode of the light emitting element, the emission layer comprising a first portion overlapping the first portion of the first electrode and a second portion overlapping the second portion of the first electrode;
a second electrode of the light emitting element overlapping the emission layer;
a conductive layer disposed between the first portion of the emission layer and the second portion of the emission layer in a plan view, the conductive layer extending from the driving voltage line and transferring the driving voltage;
a first capacitor comprising a first capacitor electrode which is in a same layer as the semiconductor layer of the transistor; and
a second capacitor comprising a second capacitor electrode which is in a same layer as the second electrode or the third electrode of the transistor.