US 12,457,801 B2
APR placement for hybrid sheet cells
Kuan-Yu Chen, Hsinchu (TW); Wei-Cheng Tzeng, Taipei (TW); Shih-Wei Peng, Hsinchu (TW); Wei-Cheng Lin, Taichung (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 21, 2022, as Appl. No. 17/581,365.
Claims priority of provisional application 63/232,527, filed on Aug. 12, 2021.
Prior Publication US 2023/0053139 A1, Feb. 16, 2023
Int. Cl. H10D 84/85 (2025.01); G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/856 (2025.01) [G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first cell structure that includes:
first rows that each include first nanosheet structures that each include a first number of nanosheets; and
second rows that are adjacent the first rows and that each include second nanosheet structures that each include a second number of nanosheets, where the second number is different than the first number; and
a plurality of rows including the first rows and the second rows,
wherein each of the first nanosheet structures is in a respective one of the first rows and each of the second nanosheet structures is in a respective one of the second rows, and
wherein at least two of the first rows are adjacent one another and at least two of the second rows are adjacent one another.