US 12,457,799 B2
Antenna structure
Xuelian Zhu, San Jose, CA (US); Navneet K. Jain, Milpitas, CA (US); Juhan Kim, Santa Clara, CA (US); James P. Mazza, Saratoga Springs, NY (US); Jia Zeng, Sunnyvale, CA (US); David C. Pritchard, Glenville, NY (US); and Mahbub Rashed, Cupertino, CA (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Mar. 7, 2023, as Appl. No. 18/118,317.
Prior Publication US 2024/0304616 A1, Sep. 12, 2024
Int. Cl. H01Q 1/38 (2006.01); H01L 27/06 (2006.01); H01Q 1/22 (2006.01); H01Q 1/48 (2006.01); H10D 84/40 (2025.01); H10D 84/80 (2025.01); H10D 89/60 (2025.01)
CPC H10D 84/40 (2025.01) [H01Q 1/2283 (2013.01); H01Q 1/38 (2013.01); H01Q 1/48 (2013.01); H10D 84/811 (2025.01); H10D 89/611 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A structure comprising an antenna cell comprising a single P-well isolated by a deep trench isolation structure and comprising at least one diffusion region,
the structure further comprising a deep N-well in a semiconductor substrate which, with the deep trench isolation structure, isolates the antenna cell, wherein the deep trench isolation structure extends into the deep N-well.