US 12,457,796 B2
Manufacturing method of semiconductor device having frontside and backside contacts
Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 16, 2022, as Appl. No. 17/745,251.
Prior Publication US 2023/0369133 A1, Nov. 16, 2023
Int. Cl. H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01)
CPC H10D 84/038 (2025.01) [H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 64/258 (2025.01); H10D 84/017 (2025.01); H10D 84/0184 (2025.01); H10D 84/0186 (2025.01); H10D 84/85 (2025.01); H10D 30/6757 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first transistor comprising a first channel region, a first gate structure surrounding the first channel region, and first source/drain regions on opposite sides of the first gate structure, wherein forming the first transistor comprises:
forming a first one of the first source/drain regions in a first dielectric layer such that a sidewall of the first one of the first source/drain regions is adjacent a sidewall of the first dielectric layer;
forming a second transistor comprising a second channel region, a second gate structure surrounding the second channel region, and second source/drain regions on opposite sides of the second gate structure;
forming a front-side contact on a top end of a first one of the first source/drain regions of the first transistor; and
forming a first back-side contact extending from a bottom end of the first one of the first source/drain regions of the first transistor to a bottom end of a first one of the second source/drain regions of the second transistor, wherein forming the first back-side contact comprises:
forming the first back-side contact in a second dielectric layer, distinct from the first dielectric layer, such that a sidewall of the first back-side contact is adjacent a sidewall of the second dielectric layer and an upper surface of the first back-side contact is adjacent a bottom surface of the first dielectric layer.