US 12,457,793 B2
Vertical transport field effect transistor (VTFET) with backside wraparound contact
Ruilong Xie, Niskayuna, NY (US); Brent A. Anderson, Jericho, VT (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Nicholas Anthony Lanzillo, Wynantskill, NY (US); Reinaldo Vega, Mahopac, NY (US); and Albert M. Chu, Nashua, NH (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 1, 2022, as Appl. No. 17/978,942.
Prior Publication US 2024/0145311 A1, May 2, 2024
Int. Cl. H10D 30/67 (2025.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/013 (2025.01) [H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01); H10D 84/038 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A vertical transport field effect transistor (VTFET) apparatus comprising:
a fin-shaped channel structure;
a gate stack surrounding the channel structure;
a top source/drain structure at a top end of the channel structure;
a top interconnect layer above the top source/drain structure;
a top contact that electrically connects the top source/drain structure to the top interconnect layer;
a bottom source/drain structure at a bottom end of the channel structure, wherein the bottom source/drain structure has a bottom surface and a side surface;
a backside interconnect layer below the bottom source/drain structure; and
a backside contact that touches the bottom surface of the bottom source/drain structure and also touches the side surface of the bottom source/drain structure and electrically connects the bottom source/drain structure to the backside interconnect layer.