US 12,457,792 B2
Thin film structure and electronic device including the same
Sanghyun Jo, Seoul (KR); Jinseong Heo, Suwon-si (KR); Hyangsook Lee, Suwon-si (KR); Sangwook Kim, Osan-si (KR); and Yunseong Lee, Osan-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 15, 2024, as Appl. No. 18/635,385.
Application 18/635,385 is a division of application No. 17/036,469, filed on Sep. 29, 2020, abandoned.
Claims priority of application No. 10-2019-0120539 (KR), filed on Sep. 30, 2019.
Prior Publication US 2024/0266418 A1, Aug. 8, 2024
Int. Cl. H10D 64/68 (2025.01); H01L 21/02 (2006.01); H10D 1/68 (2025.01)
CPC H10D 64/691 (2025.01) [H01L 21/02181 (2013.01); H01L 21/02194 (2013.01); H01L 21/022 (2013.01); H01L 21/02356 (2013.01); H10D 1/68 (2025.01); H10D 64/689 (2025.01); H10D 64/685 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A thin film structure, comprising:
a dielectric layer including a plurality of layers to form a compound of HfxZr1-xOz, the plurality of layers including a first layer, a second layer on the first layer, and an uppermost layer over the second layer, and
a first conductive layer on the dielectric layer, the first conductive layer directly contacting the uppermost layer of the plurality of layers in the dielectric layer, wherein
in the compound of HfxZr1-xOz, 0<x<1, z is a real number,
the uppermost layer includes HfO2,
none of the plurality of layers in the dielectric layer are thicker than the uppermost layer of the dielectric layer, the first layer includes HfO2 and has a thickness of i*t (i is an integer, and t is a real number),
the second layer includes ZrO2 and has a thickness of j*t (j is an integer and j>i), and
the uppermost layer has a thickness of k*t (k is and integer and k>i, j).