US 12,457,791 B2
Method of forming contact structure, method of fabricating semiconductor device, contact structure and semiconductor device including the same
Ka-Hyun Kim, Cheongju (KR); Hyun Seok Lee, Daejeon (KR); Jae Woo Lee, Sejong (KR); and Joon-Ho Oh, Busan (KR)
Assigned to SK hynix Inc., Icheon (KR); Chungbuk National University Industry-Academic Cooperation Foundation, Cheongju (KR); Korea University Research and Business Foundation, Sejong Campus, Sejong (KR); and Korea Institute of Energy Research, Daejeon (KR)
Filed by SK hynix Inc., Icheon (KR); Chungbuk National University Industry-Academic Cooperation Foundation, Cheongju (KR); Korea University Research and Business Foundation, Sejong Campus, Sejong (KR); and KOREA INSTITUTE OF ENERGY RESEARCH, Daejeon (KR)
Filed on Dec. 30, 2022, as Appl. No. 18/148,815.
Claims priority of application No. 10-2022-0007467 (KR), filed on Jan. 18, 2022.
Prior Publication US 2023/0231027 A1, Jul. 20, 2023
Int. Cl. H10D 64/62 (2025.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H10D 62/83 (2025.01); H10D 64/23 (2025.01)
CPC H10D 64/62 (2025.01) [H01L 21/28518 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a contact structure, comprising:
forming a porous silicon layer on a substrate by using an epitaxy process;
forming a dielectric layer on the porous silicon layer;
forming a metal layer on the dielectric layer;
forming a silicide member having a three-dimensional structure in the porous silicon layer by diffusing metal atoms of the metal layer into the porous silicon layer through the dielectric layer and reacting the diffused metal atoms with the porous silicon layer in a heat treatment process;
removing the metal layer and the dielectric layer;
etching at least a portion of the porous silicon layer to at least partially expose the three-dimensional structure of the silicide member after removing the metal layer and the dielectric layer; and
forming a conductive layer in contact with the silicide member, wherein the conductive layer is formed to three-dimensionally contact the three-dimensional structure of the exposed silicide member.