US 12,457,790 B2
Semiconductor device including conductive nitride feature and method of making the semiconductor device
Po-Chin Chang, Hsinchu (TW); Yuting Cheng, Hsinchu (TW); Hsu-Kai Chang, Hsinchu (TW); Chia-Hung Chu, Hsinchu (TW); Tzu-Pei Chen, Hsinchu (TW); Shuen-Shin Liang, Hsinchu (TW); Sung-Li Wang, Hsinchu (TW); Pinyen Lin, Hsinchu (TW); and Lin-Yu Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/854,676.
Prior Publication US 2024/0006505 A1, Jan. 4, 2024
Int. Cl. H01L 29/45 (2006.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)
CPC H10D 64/62 (2025.01) [H10D 64/01 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor structure that includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature that is disposed in the second dielectric feature and that is connected to at least one of the source/drain regions and the gate structure;
a conductive nitride feature that includes metal nitride or alloy nitride, that is disposed in the second dielectric feature, and that is connected to the contact feature;
a third dielectric feature that is disposed over the second dielectric feature; and
a conductive line feature that is disposed in the third dielectric feature and that is connected to the conductive nitride feature opposite to the contact feature,
wherein the conductive nitride feature is amorphous.