US 12,457,788 B2
Semiconductor device and method for manufacturing the same
Jae Ho Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 4, 2022, as Appl. No. 17/980,988.
Claims priority of application No. 10-2022-0063481 (KR), filed on May 24, 2022.
Prior Publication US 2023/0411465 A1, Dec. 21, 2023
Int. Cl. H10D 64/23 (2025.01); H01L 23/532 (2006.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)
CPC H10D 64/251 (2025.01) [H01L 23/53257 (2013.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first contact plug penetrating a source structure, the first contact plug having a first portion having a first width and a second portion having a second width that is larger than the first width;
a stack formed on the source structure and the first contact plug;
a second contact plug penetrating the stack, the second contact plug connected to the first contact plug;
a first spacer surrounding the first portion and the second portion of the first contact plug; and
a second spacer surrounding the first spacer to surround the second portion of the first contact plug.