US 12,457,775 B2
Power MOSFET with gate-source ESD diode structure
Wan-Yu Kai, New Taipei (TW); Chia-Wei Hu, New Taipei (TW); and Ta-Chuan Kuo, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on Jul. 2, 2024, as Appl. No. 18/762,567.
Application 18/762,567 is a division of application No. 18/416,776, filed on Jan. 18, 2024, granted, now 12,154,941.
Prior Publication US 2025/0241026 A1, Jul. 24, 2025
Int. Cl. H01L 29/06 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01); H10D 89/60 (2025.01)
CPC H10D 62/109 (2025.01) [H10D 30/668 (2025.01); H10D 64/513 (2025.01); H10D 89/611 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a drain and a source on opposing sides of an epitaxial layer;
a body region and a plurality of gates formed in the epitaxial layer;
an interlayer dielectric layer over the epitaxial layer;
a gate-source Electrostatic Discharge (ESD) diode in the interlayer dielectric layer, wherein the gate-source ESD diode structure comprises a first p-type region, a first n+ region, a second p-type region, a second n+ region, and a third p-type region connected in cascade;
a source contact connected to the source and the third p-type region of the gate-source ESD diode structure, and a gate contact connected to the plurality of gates and the first p-type region of the gate-source ESD diode structure;
and
a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure, wherein the breakdown voltage enhancement and leakage prevention structure comprises a body ring structure surrounding the plurality of gates.