US 12,457,774 B2
Multi-gate device and method of fabrication thereof
I-Sheng Chen, Taipei (TW); Yee-Chia Yeo, Hsinchu (TW); Chih Chieh Yeh, Taipei (TW); and Cheng-Hsien Wu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 1, 2023, as Appl. No. 18/526,856.
Application 18/526,856 is a division of application No. 17/353,155, filed on Jun. 21, 2021, granted, now 11,855,151.
Application 15/600,441 is a division of application No. 14/994,399, filed on Jan. 13, 2016, granted, now 9,660,033, issued on May 23, 2017.
Application 17/353,155 is a continuation of application No. 16/723,559, filed on Dec. 20, 2019, granted, now 11,043,561, issued on Jun. 22, 2021.
Application 16/723,559 is a continuation of application No. 16/195,389, filed on Nov. 19, 2018, granted, now 10,522,625, issued on Dec. 31, 2019.
Application 16/195,389 is a continuation of application No. 15/600,441, filed on May 19, 2017, granted, now 10,134,843, issued on Nov. 20, 2018.
Prior Publication US 2024/0105778 A1, Mar. 28, 2024
Int. Cl. H10D 30/69 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/822 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/751 (2025.01) [H10D 30/024 (2025.01); H10D 30/031 (2025.01); H10D 30/6212 (2025.01); H10D 30/6217 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/822 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 84/0179 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
providing a fin having a first fin portion including a plurality of channel layers composed of a first material and a second fin portion disposed beneath the first fin portion, wherein the second fin portion is composed of a second material having a different bandgap than the first material;
forming a dielectric layer at least partially wrapping around each channel layer of the plurality of channel layers; and
forming a metal layer adjacent to the fin;
wherein a distance between adjacent channel layers of the plurality of channel layers is determined based on a predetermined threshold; and
wherein an interposing feature that fills a gap between the adjacent channel layers of the plurality of channel layers is substantially free of the metal layer.