US 12,457,773 B2
Semiconductor device
Yukinori Shima, Tatebayashi (JP); Masakatsu Ohno, Utsunomiya (JP); and Takumi Shigenobu, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Sep. 13, 2023, as Appl. No. 18/367,700.
Application 18/367,700 is a continuation of application No. 17/536,526, filed on Nov. 29, 2021, granted, now 11,799,034.
Application 17/536,526 is a continuation of application No. 16/916,228, filed on Jun. 30, 2020, granted, now 11,211,501, issued on Dec. 28, 2021.
Claims priority of application No. 2019-133334 (JP), filed on Jul. 19, 2019.
Prior Publication US 2023/0420571 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H10D 30/67 (2025.01); H10D 64/68 (2025.01)
CPC H10D 30/6755 (2025.01) [H01L 21/02164 (2013.01); H10D 30/6713 (2025.01); H10D 64/685 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulating layer;
a second insulating layer;
a semiconductor layer; and
a first conductive layer,
wherein the semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer,
wherein the first insulating layer has a stacked-layer structure including a first insulating film, a second insulating film, and a third insulating film that are stacked in this order,
wherein the second insulating layer includes an oxide,
wherein the semiconductor layer includes indium and oxygen,
wherein the third insulating film includes a part in contact with the semiconductor layer,
wherein the first insulating film includes silicon and nitrogen,
wherein the third insulating film includes silicon and oxygen,
wherein the second insulating film includes silicon, nitrogen, and oxygen, and
wherein a thickness of the second insulating film is larger than a thickness of the first insulating film and a thickness of the third insulating film.