| CPC H10D 30/62 (2025.01) [H10D 30/024 (2025.01); H10D 62/118 (2025.01); H10D 84/0128 (2025.01); H10D 84/0144 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] | 20 Claims |
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1. A device, comprising:
first and second stacks of first and second nanostructured layers arranged in an alternating configuration on a substrate;
first and second epitaxial regions of opposite conductivity type on the first and second stacks, respectively;
first and second nanostructured channel regions in the first nanostructured layers of the first and second stacks, respectively; and
first and second gate-all-around (GAA) structures wrapped around each of the first and second nanostructured channel regions, respectively, wherein the first and second GAA structures comprise:
first and second gate dielectric layers wrapped around the first and second nanostructured channel regions, respectively;
first and second gate barrier layers disposed on the first and second gate dielectric layers, respectively, the first and second gate barrier layers having similar material compositions and different work function values and doping concentrations from one another; and
first and second diffusion barrier layers on the first and second gate barrier layers, respectively, the first diffusion barrier layer being thicker than the second diffusion barrier layer.
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