US 12,457,757 B2
Capacitors having vertical contacts extending through conductive tiers
Paolo Tessariol, Montebelluna (IT); and Qiang Tang, Cupertino, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 14, 2022, as Appl. No. 17/966,619.
Application 17/966,619 is a continuation of application No. 15/689,735, filed on Aug. 29, 2017, granted, now 11,489,038.
Prior Publication US 2023/0031083 A1, Feb. 2, 2023
Int. Cl. H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 20/00 (2023.01); H10D 1/68 (2025.01)
CPC H10D 1/68 (2025.01) [H01L 21/76895 (2013.01); H01L 23/5222 (2013.01); H01L 23/535 (2013.01); H10B 20/60 (2023.02); H10D 1/714 (2025.01); H10D 1/716 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An apparatus comprising:
levels of first conductive materials interleaved with levels of first dielectric materials, the levels of first conductive materials forming plates of a capacitor;
levels of second conductive materials interleaved with levels of second dielectric materials, wherein the levels of second conductive materials and the levels of second dielectric materials are located on a side of and not interleaved with the levels of first conductive materials and the levels of first dielectric materials and separated from the levels of first conductive materials and the levels of first dielectric materials, and the levels of second conductive materials are not electrically connected to the first levels of conductive materials;
memory cells arranged in memory cell strings and located along pillars, the pillars extending through the levels of second conductive materials and the levels of second dielectric materials, wherein the levels of second conductive materials form respective control gates associated with the memory cells;
conductive contacts extending through the levels of first conductive materials and the levels of first dielectric materials, the conductive contacts electrically separated from the levels of first conductive materials, the conductive contacts forming first capacitor nodes of the capacitor, wherein the pillars extending through the levels of second conductive materials and the levels of second dielectric materials are different from the conductive contacts electrically separated from the levels of first conductive materials; and
additional conductive contacts extending through the levels of first conductive materials and the levels of first dielectric materials, the additional conductive contacts contacting the levels of first conductive materials to electrically couple the levels of first conductive materials to each other through the additional conductive contacts, the additional conductive contacts forming second capacitor nodes of the capacitor, wherein the pillars extending through the levels of second conductive materials and the levels of second dielectric materials are different from the additional conductive contacts contacting the levels of first conductive materials.