US 12,457,748 B2
Semiconductor device and method of manufacturing semiconductor device
Shoji Aota, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Sep. 1, 2022, as Appl. No. 17/901,656.
Claims priority of application No. 2022-037153 (JP), filed on Mar. 10, 2022.
Prior Publication US 2023/0292520 A1, Sep. 14, 2023
Int. Cl. H10B 43/40 (2023.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/40 (2023.01)
CPC H10B 43/40 (2023.02) [H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 41/40 (2023.02); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first transistor having a first diffusion region and a second diffusion region in a substrate, a first gate insulating film on a first channel region between the first diffusion region and the second diffusion region, and a first gate electrode on the first gate insulating film;
a second transistor adjacent to the first transistor and having a third diffusion region and a fourth diffusion region in the substrate, a second gate insulating film on a second channel region between the third diffusion region and the fourth diffusion region, and a second gate electrode on the second gate insulating film;
a first insulating portion between the first gate electrode and the second gate electrode; and
a second insulating portion covering the first transistor, the second transistor, and the first insulating portion, wherein
the first insulating portion and the second insulating portion are different materials, and
the first insulating portion directly contacts a sidewall of the first gate electrode and a sidewall of the second gate electrode.