US 12,457,746 B2
Semiconductor device and method of manufacturing the same
Nam Jae Lee, Cheongju-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 2, 2024, as Appl. No. 18/624,721.
Application 16/851,894 is a division of application No. 15/914,130, filed on Mar. 7, 2018, granted, now 10,665,601, issued on May 26, 2020.
Application 18/624,721 is a continuation of application No. 17/578,718, filed on Jan. 19, 2022, granted, now 11,980,033.
Application 17/578,718 is a continuation of application No. 16/851,894, filed on Apr. 17, 2020, granted, now 11,264,399, issued on Mar. 1, 2022.
Claims priority of application No. 10-2017-0096929 (KR), filed on Jul. 31, 2017.
Prior Publication US 2024/0251562 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/35 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/35 (2023.02) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/10 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a word line;
a first select structure including a first horizontal conductive pattern overlapping the word line in a first direction, wherein the first horizontal conductive pattern and the word line include a first hole and a second hole;
a second select structure including a second horizontal conductive pattern overlapping the word line in the first direction and spaced apart from the first select structure in a second direction perpendicular to the first direction, wherein the second horizontal conductive pattern and the word line include a third hole and a fourth hole; and
channel pillars formed in the first hole, the second hole, the third hole and the fourth hole, respectively,
wherein the first hole has sidewalls that face opposite directions and are symmetric, and
wherein the first horizontal conductive pattern is absent between the first select structure and the second select structure.