US 12,457,740 B2
Semiconductor storage device including a low on-resistance joint between arrays
Ryota Fujitsuka, Yokkaichi (JP); Ryota Suzuki, Yokkaichi (JP); and Kenta Yamada, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 10, 2022, as Appl. No. 17/654,261.
Claims priority of application No. 2021-146848 (JP), filed on Sep. 9, 2021.
Prior Publication US 2023/0077151 A1, Mar. 9, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor storage device comprising:
a first stack including a plurality of first electrode films stacked in a first direction and electrically isolated from each other;
a second stack provided above the first stack and including a plurality of second electrode films that are stacked in the first direction and are electrically isolated from each other;
a first column portion provided in the first stack to extend in the first direction and including a first insulation film, a first charge storage film, a second insulation film, and a first semiconductor layer;
a second column portion provided in the second stack to extend in the first direction and including a third insulation film, a second charge storage film, a fourth insulation film, and a second semiconductor layer; and
a connecting portion provided between the first column portion and the second column portion, dividing the first insulation film and the third insulation film from each other, the first charge storage film and the second charge storage film from each other, and the second insulation film and the fourth insulation film from each other all over the first and second column portions, and configured to electrically connect the first semiconductor layer and the second semiconductor layer to each other, wherein
the connecting portion has a part of a semiconductor body projecting in a second direction perpendicular to the first direction,
the semiconductor body is made of a same material as the first and second semiconductor layers and is formed as one continuous semiconductor layer with the first and second semiconductor layers,
the semiconductor body is provided at an outermost side of the connecting portion and directly contacts with a sixth insulation film provided between the first stack and the second stack,
a first distance in the first direction between a bottom surface of the connecting portion and a top surface of a topmost electrode film of the first electrode films is smaller than a second distance in the second direction between an outer surface of the first semiconductor layer and a surface facing toward the first semiconductor layer of the topmost electrode film, and
a third distance in the first direction between a top surface of the connecting portion and a bottom surface of a bottommost electrode film of the second electrode films is smaller than a fourth distance in the second direction between an outer surface of the second semiconductor layer and a surface facing toward the second semiconductor layer of the bottommost electrode film.