US 12,457,736 B2
Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same
Hiroaki Namba, Yokkaichi (JP)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Jul. 5, 2022, as Appl. No. 17/857,375.
Prior Publication US 2024/0015960 A1, Jan. 11, 2024
Int. Cl. H10B 41/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an alternating stack of insulating layers and electrically conductive layers;
memory openings vertically extending through the alternating stack;
memory opening fill structures located in the memory openings and comprising a respective vertical semiconductor channel and a respective vertical stack of memory elements;
a dielectric material portion;
contact via structures vertically extending through the dielectric material portion and contacting a respective one of the electrically conductive layers;
an integrated via and pad structure comprising a conductive via portion vertically extending through the dielectric material portion and contacting a front side of a conductive pad portion; and
a backside contact pad structure contacting a planar backside surface of the integrated via and pad structure;
wherein each of the contact via structures comprises a first base metal portion in contact with the respective one of the electrically conductive layers, a first metallic liner in contact with the first base metal portion, and a first metallic fill material portion that is laterally surrounded by the first metallic liner and vertically spaced from the first base metal portion by a horizontally-extending portion of the first metallic liner.