US 12,457,733 B2
Semiconductor device having bonding structure and method of manufacturing the same
Yi-Jen Lo, New Taipei (TW); Chiang-Lin Shih, New Taipei (TW); and Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Aug. 26, 2022, as Appl. No. 17/896,933.
Prior Publication US 2024/0074145 A1, Feb. 29, 2024
Int. Cl. H10B 12/00 (2023.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H10B 12/315 (2023.02) [H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a bonding structure disposed on the substrate;
a bit line disposed on the bonding structure;
a channel layer disposed on the bit line, and comprising a first doped region and a second doped region; and
a word line surrounding the first doped region and the second doped region of the channel layer,
wherein the bonding structure comprises a dielectric material, and
wherein the first doped region has a first conductive type, and the second doped region has a second conductive type different from the first type.