| CPC H05K 3/323 (2013.01) [H10K 59/1213 (2023.02); H10K 59/65 (2023.02); H10K 59/873 (2023.02); H10K 59/879 (2023.02); H10K 59/131 (2023.02)] | 18 Claims |

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1. A semiconductor device comprising:
a first substrate;
a functional element arranged on a main surface of the first substrate;
a terminal connected to an electrode electrically connected to the functional element and arranged on a second substrate different from the first substrate;
an insulating portion configured to cover an end of the terminal; and
a conductive film arranged on the terminal and the insulating portion and containing a conductive particle,
wherein in a cross-section of the semiconductor device perpendicular to the main surface of the first substrate, the insulating portion includes a top and lateral sides inclined with respect to the top, and a width of the top is smaller than a diameter of the conductive particle.
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