US 12,456,911 B2
Driving device and semiconductor device
Tatsunori Sakano, Tokyo (JP); Tomoko Matsudai, Tokyo (JP); and Ryohei Gejo, Kawasaki Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporaton, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Feb. 27, 2024, as Appl. No. 18/588,773.
Claims priority of application No. 2023-142368 (JP), filed on Sep. 1, 2023.
Prior Publication US 2025/0080105 A1, Mar. 6, 2025
Int. Cl. H02M 1/08 (2006.01); H02M 1/00 (2006.01); H03K 17/16 (2006.01); H10D 12/00 (2025.01); H02M 7/5387 (2007.01)
CPC H02M 1/0054 (2021.05) [H02M 1/08 (2013.01); H03K 17/168 (2013.01); H10D 12/481 (2025.01); H02M 7/5387 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A driving device, comprising:
a controller controlling a semiconductor element including a first gate electrode and a second gate electrode, on the basis of a control signal including information relevant to an ON timing and an OFF timing of the semiconductor element; and
a driver generating a first driving signal for turning on the semiconductor element through the first gate electrode at the ON timing, and turning off the semiconductor element through the first gate electrode at the OFF timing, and a second driving signal for turning off the semiconductor element by pulling out a minority carrier of the semiconductor element through the second gate electrode at a timing earlier than the OFF timing,
the driver being capable of switching between a first output impedance and a second output impedance when driving the first gate electrode, in accordance with a switching rate of the semiconductor element, switching to the first output impedance when the switching rate is faster than a predetermined value, and switching to the second output impedance lower than the first output impedance when the switching rate is slower than the predetermined value.