US 12,456,856 B2
Overcurrent protection of power semiconductor packages using integrated positive temperature indicator
Oluwaseun Kehinde Oyewole, Chicago, IL (US); Cesar Martinez, Chicago, IL (US); Sergio Fuentes Godinez, Newark, CA (US); Francois Perraud, Chicago, IL (US); Marco Doms, Chicago, IL (US); and Martin Pineda, Fremont, CA (US)
Assigned to Littelfuse, Inc., Rosemont, IL (US)
Filed by Littelfuse, Inc., Chicago, IL (US)
Filed on Jul. 31, 2023, as Appl. No. 18/228,436.
Prior Publication US 2025/0047091 A1, Feb. 6, 2025
Int. Cl. H02H 5/04 (2006.01)
CPC H02H 5/04 (2013.01) 15 Claims
OG exemplary drawing
 
1. A semiconductor device protection arrangement, comprising:
a semiconductor chip;
a controller, coupled to the semiconductor chip; and
a temperature sensor, disposed in thermal contact with the semiconductor chip, the temperature sensor comprising:
a positive temperature indicator (PTI) component printed on an electrically insulating layer; and
a thin copper sheet, disposed subjacent to the electrically insulating layer.