US 12,456,720 B2
Method for bonding of chips
Markus Wimplinger, Ried in Kreis (AT)
Assigned to EV Group E. Thallner GmbH, St. Florian am Inn (AT)
Filed by EV Group E. Thallner GmbH, St. Florian am Inn (AT)
Filed on Jan. 29, 2024, as Appl. No. 18/425,205.
Application 17/144,655 is a division of application No. 16/483,077, granted, now 11,764,198, issued on Sep. 19, 2023, previously published as PCT/EP2017/054971, filed on Mar. 2, 2017.
Application 18/425,205 is a continuation of application No. 17/144,655, filed on Jan. 8, 2021, granted, now 11,990,463.
Prior Publication US 2024/0170474 A1, May 23, 2024
Int. Cl. H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H05K 13/04 (2006.01)
CPC H01L 25/50 (2013.01) [H01L 24/74 (2013.01); H01L 24/75 (2013.01); H01L 24/80 (2013.01); H01L 25/0652 (2013.01); H05K 13/0404 (2013.01); H01L 2224/80003 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80894 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method operatively associated with a bond head of a bonding device for bonding chips onto at least one of a semiconductor substrate or onto further chips, the method comprising:
forming a liquid film on mounting points on the at least one of the semiconductor substrate or the further chips, the at least one of the semiconductor substrate or the further chips comprising a dielectric surface region and an electric surface region;
positioning hybrid bond surfaces of the chips at the mounting points on the at least one of the semiconductor substrate or the further chips, by the bond head of a bonding device, the hybrid bond surfaces comprising a dielectric surface region and an electric surface region;
using the bond head to directly bond the chips to the mounting points on the at least one of the semiconductor substrate or the further chips, wherein using the bond head to directly bond the chips comprises first bonding a center of the chips onto the liquid film and then bonding outwards from the center of the chips onto the liquid film while holding the chips by the bond head; and
releasing the chips from fixation by the bond head, wherein the electric surface region of the chips and the electric surface region of the at least one of the semiconductor substrate or the further chips self-align congruently with one another.