US 12,456,707 B2
Stacked clip design for GaN half bridge IPM
Kwang-Soo Kim, Sunnyvale, CA (US); Makoto Shibuya, Tokyo (JP); Woochan Kim, San Jose, CA (US); and Vivek Arora, San Jose, CA (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Oct. 6, 2022, as Appl. No. 17/960,871.
Prior Publication US 2024/0120308 A1, Apr. 11, 2024
Int. Cl. H01L 23/00 (2006.01); H01L 25/16 (2023.01)
CPC H01L 24/40 (2013.01) [H01L 24/41 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/84 (2013.01); H01L 25/16 (2013.01); H01L 2224/4001 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/4103 (2013.01); H01L 2224/41052 (2013.01); H01L 2224/41175 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/84815 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1426 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30107 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a substrate having first and second conductive traces;
a semiconductor die having a transistor with; a first terminal and a second terminal on a same side of the semiconductor die;
a first metal clip having first and second end portions and a middle portion that joins the first and second end portions of the first metal clip, the first end portion of the first metal clip coupled to the first terminal of the transistor, and the second end portion of the first metal clip coupled to the first conductive trace of the substrate; and
a second metal clip having first and second end portions and a middle portion that joins the first and second end portions of the second metal clip, the first end portion of the second metal clip coupled to the second terminal of the transistor, the second end portion of the second metal clip coupled to the second conductive trace of the substrate, and the middle portion of the second metal clip spaced apart from and at least partially overlying a portion of the first metal clip.