US 12,456,700 B2
Semiconductor die having an optical detection marker and method of producing the semiconductor die
Dietrich Bonart, Bad Abbach (DE); and Bernhard Weidgans, Bernhardswald (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 7, 2022, as Appl. No. 17/962,131.
Prior Publication US 2024/0120298 A1, Apr. 11, 2024
Int. Cl. H01L 23/544 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/03001 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05638 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06515 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/04941 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor die, comprising:
a semiconductor substrate;
a first contact pad structure above the semiconductor substrate, the first contact pad structure comprising a metal contact pad configured for electrical contact and a metal layer adjoining an underside of the metal contact pad and jutting out beyond an edge of the metal contact pad; and
a first optical detection marker in a periphery of the first contact pad structure and having a different contrast than the metal contact pad,
wherein the first optical detection marker comprises a region of the metal layer that is adjacent to the edge of the metal contact pad and unobstructed by the metal contact pad so as to be optically visible in a plan view of the semiconductor die.