US 12,456,699 B2
Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the same
Shingo Totani, Yokkaichi (JP); Fumitaka Amano, Yokkaichi (JP); and Kensuke Ishikawa, Yokkaichi (JP)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on May 9, 2022, as Appl. No. 17/662,501.
Prior Publication US 2023/0361061 A1, Nov. 9, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/05 (2013.01) [H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/37001 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A bonded assembly, comprising:
a first semiconductor die comprising first semiconductor devices and a first bonding pad, wherein the first bonding pad comprises a first copper material portion containing (200) copper grains at a volume fraction of at least 10% as determined by X-ray diffraction measurement and a first conductive barrier layer located between the first semiconductor devices and the first copper material portion; and
a second semiconductor die comprising second semiconductor devices and a second bonding pad, wherein the second bonding pad comprises a second copper material portion and a second conductive barrier layer located between the second semiconductor devices and the second copper material portion;
wherein the second bonding pad is bonded to the first bonding pad.