US 12,456,698 B2
Pad structures for semiconductor devices
Yihuan Wang, Wuhan (CN); and Mingkang Zhang, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Oct. 15, 2021, as Appl. No. 17/503,077.
Application 17/503,077 is a continuation of application No. PCT/CN2021/115512, filed on Aug. 31, 2021.
Prior Publication US 2023/0062321 A1, Mar. 2, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01)
CPC H01L 24/05 (2013.01) [H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H01L 2224/0362 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/08146 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1438 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first die comprising a first contact structure formed on a face side of the first die;
a first semiconductor structure formed with a semiconductor layer that is disposed on a back side of the first die, the first semiconductor structure being conductively connected with the first contact structure from the back side of the first die; and
a first pad structure disposed on the back side of the first die and conductively coupled with the first semiconductor structure, wherein
a first end of the first pad structure protrudes into the first semiconductor structure along a direction from the back side of the first die to the face side of the first die, such that the first end of the first pad structure is positioned lower than an upper surface of the first semiconductor structure and higher than a lower surface of the first semiconductor structure while a second end of the first pad structure is positioned higher than the upper surface of the first semiconductor structure, and
one end of the first contact structure protrudes into the first semiconductor structure along a direction from the face side of the first die to the back side of the first die, such that the first pad structure and the first contact structure are indirectly coupled conductively via the first semiconductor structure.