US 12,456,696 B2
Dummy stacked structures surrounding TSVs and method forming the same
Mingni Chang, Hsinchu (TW); Yun-Chin Tsou, Hsinchu (TW); Ching-Jing Wu, Zaoqiao Township (TW); Shiou-Fan Chen, Hsinchu (TW); and Ming-Yih Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 14, 2024, as Appl. No. 18/663,878.
Application 18/663,878 is a division of application No. 17/464,903, filed on Sep. 2, 2021, granted, now 12,014,997.
Claims priority of provisional application 63/217,341, filed on Jul. 1, 2021.
Prior Publication US 2024/0304571 A1, Sep. 12, 2024
Int. Cl. H01L 23/58 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01); H01L 23/522 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 23/5226 (2013.01); H01L 2225/06544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate;
a first through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a first plurality of dummy stacked structures in the plurality of dielectric layers, wherein the first plurality of dummy stacked structures are adjacent to and encircle the first through-via.