US 12,456,685 B2
Microelectronic devices comprising a boron-containing material, and related electronic systems and methods
Xiao Li, Boise, ID (US); and Jordan D. Greenlee, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 26, 2022, as Appl. No. 17/822,726.
Claims priority of provisional application 63/365,646, filed on Jun. 1, 2022.
Prior Publication US 2023/0395507 A1, Dec. 7, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/0226 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising vertically alternating conductive structures and dielectric structures;
a contact structure vertically extending through the stack structure;
a liner material between the stack structure and the contact structure; and
a boron-containing material between the liner material and the stack structure.