| CPC H01L 23/5283 (2013.01) [H10D 86/85 (2025.01)] | 14 Claims |
|
1. An electronic device comprising:
a substrate;
a first silicon nitride film provided on the substrate;
a silicon oxide film provided on the first silicon nitride film;
a capacitor provided on the silicon oxide film; and
an interconnect electrically connected to the capacitor,
wherein the interconnect is disposed apart from the first silicon nitride film, and
wherein, in a plan view, an outer perimeter of the silicon oxide film is inside an outer perimeter of the first silicon nitride film.
|