US 12,456,679 B2
Backside conductive segments cover a first active region and define an opening above a second active region
Te-Hsin Chiu, Hsinchu (TW); Shih-Wei Peng, Hsinchu (TW); Wei-Cheng Lin, Taichung (TW); Jiann-Tyng Tzeng, Hsinchu (TW); and Jiun-Wei Lu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd.
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 14, 2024, as Appl. No. 18/441,533.
Application 18/441,533 is a continuation of application No. 17/446,515, filed on Aug. 31, 2021, granted, now 11,935,830.
Prior Publication US 2024/0186241 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/38 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/38 (2013.01); H01L 21/768 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising a cell, the cell comprising:
a substrate having a frontside and a backside;
a first active region formed in the backside of the substrate;
a second active region formed in the backside of the substrate and adjacent the first active region;
a frontside conductive layer formed over the frontside of the substrate;
a first plurality of conductive segments formed over the backside of the substrate; and
a second plurality of conductive segments formed over the backside of the substrate, wherein:
the first plurality of conductive segments and the second plurality of conductive segments cover the first active region from directly above the second plurality of conductive segments and define an opening directly above the second active region such that the second active region is exposed from above the second plurality of conductive segments.