| CPC H01L 23/49827 (2013.01) [H01L 21/486 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01Q 1/38 (2013.01); H10F 39/804 (2025.01); H01L 23/49894 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01)] | 44 Claims |

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1. A semiconductor device, comprising:
a glass substrate that includes:
a first surface,
a second surface opposite to the first surface, and
a first side surface between the first surface and the second surface;
a plurality of wirings that includes:
a first wiring on the first surface, and
a second wiring on the second surface;
a first insulating film that covers the first surface;
a second insulating film that covers the second surface;
a third insulating film that covers the first side surface, wherein the third insulating film is continuous with at least one of the first insulating film or the second insulating film;
a first through hole that penetrates through the glass substrate between the first surface and the second surface;
a first metal film that covers an inner wall of the first through hole; and
a fourth insulating film inside the first metal film in the first through hole.
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